Photoelectric phenomena and photoluminescence in epitaxial CdSe thin films

Photoelectric phenomena and photoluminescence (static characteristics) were studied in epitaxial CdSe thin films built up on sapphire and fluorite substrates in a feedthrough CdSe-H₂ gas-transport system. It has been established that the spectral pattern of the extrinsic luminescence and photosensitivity in epitaxial films is determined by the common centers E_V+0.06, E_V+0.27, e_v+0.48 and E_V+0.60 eV. The presence of such centers also explains the trends which the temperature characteristics of the photocurrent follow, the spectral pattern of infrared quenching, and the lux-ampere characteristics of these films.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 61–66, March, 1975.