Photoelectric phenomena and photoluminescence in epitaxial CdSe thin films |
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Authors: | A. G. Kornitskii P. S. Kireev N. M. Kondaurov |
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Affiliation: | (1) Institute of Steel and Alloys, Moscow |
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Abstract: | Photoelectric phenomena and photoluminescence (static characteristics) were studied in epitaxial CdSe thin films built up on sapphire and fluorite substrates in a feedthrough CdSe-H2 gas-transport system. It has been established that the spectral pattern of the extrinsic luminescence and photosensitivity in epitaxial films is determined by the common centers EV+0.06, EV+0.27, ev+0.48 and EV+0.60 eV. The presence of such centers also explains the trends which the temperature characteristics of the photocurrent follow, the spectral pattern of infrared quenching, and the lux-ampere characteristics of these films.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 61–66, March, 1975. |
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