ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES |
| |
Authors: | Zhang Ze and S.T.Lee |
| |
Affiliation: | Beijing Laboratory of Electron Microscopy, Center of Condensed Mater Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; Center of Super-Diamond and Advanced Films & Department of Physics and Material Sciences, City University of Hong Kong, Hong Kong, China |
| |
Abstract: | Two different types of Silicon nano-wires (SiNWs) have been observed by scanning and transmission electron microscopy. One are of free standing SiNWs deposited uniformly on the surface of silicon substrates, and the other are self-assembled into special shaped particles. These SiNWs were synthesized by thermal evaporation of SiO amorphous powders without any metal catalysts in the temperature range of 900-1250℃. Growth history reveals that the self-assembled SiNWs are formed by original nucleation from the surface of amorphous SiOx particle matrices through phase separation and silicon precipitation followed by further growth through oxide-assisted vapor-solid reactions. The above results provide a solid experimental support for the oxide-assisted growth model of SiNWs. |
| |
Keywords: | Silicon nano-wires growth mechanism microstructures |
|
| 点击此处可从《中国物理》浏览原始摘要信息 |
|
点击此处可从《中国物理》下载免费的PDF全文 |
|