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Electrophysical properties and electronic structure of tin-doped antimony telluride
Authors:I. V. Gasenkova  M. K. Zhitinskaya  S. A. Nemov  L. D. Ivanova
Affiliation:(1) Institute of Electronics, National Academy of Belarus, Minsk, Belarus;(2) St. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia;(3) Baikov Institute of Metallurgy and Materials Sciences, Russian Academy of Sciences, Leninskii pr. 49, Moscow, 117911, Russia
Abstract:The effect of Sn atoms on the electrophysical properties and x-ray photoelectron spectra of Czochralski-grown Sb2Te3 single crystals is studied. The character of the temperature dependences of the kinetic coefficients is shown to depend noticeably on the structure of the valence band, which consists of two valence subbands. Estimates of the effective density-of-states masses of holes and of the gap between the valence-band extrema in Sb2Te3: Sn agree with the data available for the Sb2Te3 not doped with tin. X-ray photoelectron spectra of Sb2Te3: Sn single crystals do not exhibit noticeable core-level shifts and electron density redistribution in the valence band.
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