Quantum-chemical approach to the elementary steps of plasma etching |
| |
| Authors: | Dieter K Fricke Hans Müller Ch Opitz |
| |
| Institution: | Sektion Chemie der Friedrich-Schiller-Universität Jena, Steiger 3, Hous 3, DDR-6900 Jena, DDR |
| |
| Abstract: | We derive for the first time a mechanism of reactive plasma etching in the system Si/F by the quantum-chemical approach. SiF2-like species at the surface play an important role. SiF3 surface complexes also occur. The final etching product SiF4 is formed with high probability in the gas phase. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
