| Effects of orientation of substrate on the enhanced low-dose-rate sensitivity （ELDRS） in NPN transistors |
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| 引用本文： | 陆妩,郑玉展,王义元,任迪远,郭旗,王志宽,王健安.Effects of orientation of substrate on the enhanced low-dose-rate sensitivity （ELDRS） in NPN transistors[J].中国物理 C,2011,35(2):169-173. |
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| 作者姓名： | 陆妩 郑玉展 王义元 任迪远 郭旗 王志宽 王健安 |
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| 作者单位： | 1. Xinjiang Technical Institute of Physies & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;;2. Xinjiang Key Laboratory of Information Materials and Devices, Urumqi 830011, China;;3. Graduate University of Chinese Academy of Sciences, Beijing 100049, China;;4. State Key Laboratory of Analog Integrated Circuits, Chongqing 400060, China |
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| 摘 要： | The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity (ELDRS). After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with <111> orientation was more sensitive to ionizing radiation than that with <100> orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper.
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| 关 键 词： | NPN晶体管 低剂量率 增强型 灵敏度 基质 实验现象 集电极电流 退火特性 |
| 收稿时间： | 2010-5-12 |
| 修稿时间： | 2010-6-2 |
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