| A compact I－V model for lightly-doped-drain MOSFETs |
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| 引用本文： | 于春利,杨林安,郝跃.A compact I－V model for lightly-doped-drain MOSFETs[J].中国物理 B,2004,13(7):1104-1109. |
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| 作者姓名： | 于春利 杨林安 郝跃 |
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| 作者单位： | Institute of Microelectronics, Xidian University, Xi'an 710071, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 60206006). |
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| 摘 要： | A novel model for lightly-doped-drain (LDD) MOSFETs is proposed, which utilizes the empirical hyperbolic tangent function to describe the I－V characteristics. The model includes the strong inversion and subthreshold mechanism, and shows a good prediction for submicron LDD MOSFET. Moreover, the model requires low computation time consumption and is suitable for design of MOSFETs devices and circuits.
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| 收稿时间： | 6/4/2003 12:00:00 AM |
| 修稿时间： | 3/1/2004 12:00:00 AM |
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