Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection |
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Authors: | D De Salvador A Coati E Napolitani M Berti AV Drigo MS Carroll JC Sturm J Stangl G Bauer L Lazzarini |
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Institution: | (1) INFM and Dipartimento di Fisica, via Marzolo 8, 35131 Padova, Italy, IT;(2) Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA, US;(3) Institute for Semiconductor Physics, Johannes-Kepler University Linz, Linz, Austria, AT;(4) CNR-MASPEC, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma, Italy, IT |
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Abstract: | In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC
layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N2) or oxidizing (O2) ambient at 850 °C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under
oxidation enhances the C diffusion with respect to the N2-annealed samples. In the early stages of the oxidation process, the loss of C from the SiGeC layer by diffusion across the
layer/cap interface dominates. This phenomenon saturates after an initial period (2–4 h), which depends on the C concentration.
This saturation is due to the formation and growth of C-containing precipitates that are promoted by the I injection and act
as a sink for mobile C atoms. The influence of carbon concentration on the competition between precipitation and diffusion
is discussed.
Received: 19 October 2001 / Accepted: 19 December 2001 / Published online: 20 March 2002 / Published online: 20 March 2002 |
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Keywords: | PACS: 66 30 Jt 61 72 Cc 68 35 Dv |
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