MBE-grown Si: Er light-emitting structures: Effect of implantation and annealing on the luminescence properties

Features appearing in the photo-and electroluminescence spectra of light-emitting structures based on MBE-grown Si: Er layers are studied. The luminescence properties of Si layers implanted by Er and O ions were used as a reference. The temperature quenching of the photoluminescence intensity of Er-containing centers in MBE-grown and implanted layers can be approximated adequately by the same functional relationships with equal activation energies but with preexponential factors differing by more than two orders of magnitude. It is shown that the electroluminescence of Er³⁺ ions can be increased by additional coimplantation of erbium and oxygen ions into MBE-grown light-emitting diode structures and subsequent annealing. After this treatment, the Er-containing centers continue to dominate the luminescence spectrum.