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氧分压对Mg掺杂ZnO薄膜结晶质量和光学特性的影响
引用本文:鲍善永,董武军,徐兴,栾田宝,李杰,张庆瑜. 氧分压对Mg掺杂ZnO薄膜结晶质量和光学特性的影响[J]. 物理学报, 2011, 60(3): 36804-036804
作者姓名:鲍善永  董武军  徐兴  栾田宝  李杰  张庆瑜
作者单位:大连理工大学物理与光电工程学院三束材料改性教育部重点实验室,大连 116024
基金项目:国家自然科学基金(批准号:10774018)和国家重点基础研究发展计划(批准号:2007CB616902)资助的课题.
摘    要:利用脉冲激光沉积技术,通过改变沉积过程中的氧气压力,在蓝宝石(0001)基片上制备了一系列ZnMgO合金.通过X射线衍射、反射和透射光谱以及室温和变温荧光光谱,对薄膜的结构和光学性能进行了系统地表征,分析了工作气压对ZnMgO合金薄膜的结晶质量及光学特性的影响.研究结果表明:随着沉积环境中氧气压力的增大,ZnMgO薄膜的结晶质量下降,富氧环境下,与蓝宝石晶格平行的ZnO晶粒的出现是导致薄膜结晶质量下降的主要原因;相对于本征ZnO,不同氧气环境下沉积的ZnMgO薄膜的紫外荧光峰均出现了不同程度的蓝移.随着工关键词:ZnOMg掺杂脉冲激光沉积薄膜生长光学特性

关 键 词:ZnO  Mg掺杂  脉冲激光沉积  薄膜生长  光学特性
收稿时间:2010-05-26

Influence of oxygen partial pressure on the crystal quality and optical properties of Mg-doped ZnO films
Bao Shan-Yong,Dong Wu-Jun,Xu Xing,Luan Tian-Bao,Li Jie,Zhang Qing-Yu. Influence of oxygen partial pressure on the crystal quality and optical properties of Mg-doped ZnO films[J]. Acta Physica Sinica, 2011, 60(3): 36804-036804
Authors:Bao Shan-Yong  Dong Wu-Jun  Xu Xing  Luan Tian-Bao  Li Jie  Zhang Qing-Yu
Affiliation:Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Opto-electronic Technology, Dalian University of Technology, Dalian 116024, China;Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Opto-electronic Technology, Dalian University of Technology, Dalian 116024, China;Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Opto-electronic Technology, Dalian University of Technology, Dalian 116024, China;Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Opto-electronic Technology, Dalian University of Technology, Dalian 116024, China;Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Opto-electronic Technology, Dalian University of Technology, Dalian 116024, China;Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Opto-electronic Technology, Dalian University of Technology, Dalian 116024, China
Abstract:Zn1-xMg<i>xO films have been deposited on Al2O3(0001) substrates at different oxygen pressures by using pulsed laser deposition method. The influence of oxygen pressure on the crystal quality and optical properties of the films is studied with X-ray diffraction (XRD), transmittance spectra, and photoluminescence (PL). It is found that the crystal quality of the films lowers with increasing of oxygen pressure from 10-4Pa to 10 Pa. At the pressure of 10-4 Pa, the epitaxial relationship between the film and sapphire substrate is determined to be ZnMgO (0001)// Al2O3(0001),ZnMgO 1 0]//Al2O3 2 0]. In the oxygen rich environment, however, another epitaxial relationship, ZnMgO (0001)//Al2O3(0001) and ZnMgO 1 0]//Al2O3 1 0], is also present in the films, which is suggested to be responsible for the decline of the crystal quality. Compared with pure ZnO films, the UV peak of Zn1-xMg<i>xO alloys shows red-shift from 3.374 to 3.332 eV with increasing oxygen working pressure increasing from 10-4 Pa up to 10 Pa. The difference in red-shifts can be attributed to the decrease of Mg content in the films resulting from the variation of oxygen pressure. A broad UV PL spectrum was observed at 10 K in the films deposited under different pressures and can be decomposed into two recombination processes of excitons, corresponding to the bound and the localized exciton luminescence, respectively. The binding energy of bound excitons in the ZnMgO films is larger than that in pure ZnO and has an increasing trend with increasing oxygen pressure.
Keywords:ZnO  Mg doped  pulsed laser deposition  thin film growth  optical property
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