调制掺杂(Al,Ga)As-GaAs异质结二维电子气场效应晶体管(TEGFET)

调制掺杂(Al,Ga)As-GaAs异质结二维电子气场效应晶体管(TEGFET)是一种基于(Al,Ga)As-GaAs的界面处存在着高载流子迁移率二线电子气的原理制成的一种新型场效应器件.科学家们预言这种器件将在微波领域及超高速超大规模集成电路中得到重要应用.本文简述了它的工作机理、基本结构、耗尽型及增强型模式、工艺制造、目前达到的性能与通常的GaAs FET的比较、初步的器件物理分析和伏安特性计算.着重指出分子束外延生长工艺是这种器件的关键工艺.

Modulation-Doped (AI,Ga)As-GaAs Heterojunction Two-Dimensional Electron Gas Field-Effect Transistor (TEGFET)

Modulation-doped (Al, Ga)As-GaAs heterojunction two-dimensional electron gas field-effect transistor (TEGFET) is a new type of FET based on the principle that two-dimensional electron gas with high carrier mobility exists at the interface between (Al, Ga)As and GaAs. It is predicted that the TEGFET will find important applications in microwave area, very high speed and very large scale IC's. This paper briefly introduces its operational mechanism, basic structure, depletion and enhancement modes, fabrication technology, a comparison of its current performance with that of conventional GaAs FET, preliminary analysis of its device physics and the calculation of V-I charateristics. The paper has emphatically pointed out that molecular beam epitaxy is the key processing in the fabrication of TEGFET.