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Electrical characteristics of silicon-nodule-related via failures observed in aluminum-silicon interconnects |
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| Authors: | Manabu Itsumi Shin-ichi Ohfuji Hideo Akiya Satoshi Nakayama Hideo Yoshino |
| Institution: | (1) NTT Lifestyle and Environmental Technology Laboratories, Atsugi-shi, Kanagawa 243-0198, Japan, JP;(2) NTT Lifestyle and Environmental Technology Laboratories, Musashino, Tokyo 180-8585, Japan, JP;(3) NTT Science and Core Technology Laboratory Group, Atsugi-shi, Kanagawa 243-0198, Japan, JP;(4) NTT Telecommunications Energy Technology Laboratories, Atsugi-shi, Kanagawa 243-0198, Japan, JP;(5) NTT Electronics Corporation, Atsugi-shi, Kanagawa 243-0198, Japan, JP |
| Abstract: | We have evaluated the electrical characteristics of silicon-nodule-related via failures in the aluminum interconnects of silicon integrated circuits. Current-voltage measurements indicated that the conduction mechanism follows Ohm's law. The resistance was 1.5–3 kΩ for a silicon nodule at a via of 1.0 μm × 1.0 μm. When the applied voltage was 3–6 V, the resistance decreased abruptly. This transition (abrupt decrease in resistance) was irreversible. We think that the resistance of 1.5–3 kΩ and the transition voltage of 3–6 V are two factors characterizing the silicon nodule. We can explain these values by assuming that aluminum in the silicon nodules at a solubility limit concentration acts as an acceptor. Received: 22 February 1999 / Accepted: 30 June 1999 |
| Keywords: | Via failures Silicon nodules Aluminum interconnects |
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