Perpendicular exchange bias and its control by magnetic,stress and
electric fields |
| |
Authors: | Ch?Binek P?Borisov Xi?Chen A?Hochstrat S?Sahoo Email author" target="_blank">W?KleemannEmail author |
| |
Institution: | (1) Department of Physics and Astronomy and the Center for Materials Research and Analysis, 203 Ferguson Hall, University of Nebraska, Lincoln, NE 68588-0111, USA;(2) Angewandte Physik, Universität Duisburg-Essen, 47048 Duisburg, Germany |
| |
Abstract: | Perpendicular exchange bias (PEB) involving perpendicular
magnetic anisotropy (PMA) in both the antiferromagnetic (AF) pinning and the
ferromagnetic (FM) sensor layer is expected to become important in future
perpendicular recording and sensing devices. Further, because of the reduced
spin dimensionality, PEB promises to be easier understandable than the
conventional planar exchange bias (EB). In addition to its first realization
using the Ising-type AF compounds FeF2 and FeCl2 we have tested
control strategies of EB being alternative to the conventional magnetic and
thermal ones. Indeed, specific symmetry properties of the pinning layer have
been shown to enable mechanical (viz. piezomagnetic via FeF2) and electric
control (viz. magneto-electric via Cr2O3) of EB, respectively.
Electric control promises to become relevant for TMR devices in MRAM
technology. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|