Thermal stability of corrugated epitaxial graphene grown on Re(0001) |
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Authors: | Miniussi E Pozzo M Baraldi A Vesselli E Zhan R R Comelli G Menteş T O Niño M A Locatelli A Lizzit S Alfè D |
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Affiliation: | Physics Department and CENMAT, University of Trieste, Via Valerio 2, I-34127 Trieste, Italy. |
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Abstract: | We report on a novel approach to determine the relationship between the corrugation and the thermal stability of epitaxial graphene grown on a strongly interacting substrate. According to our density functional theory calculations, the C single layer grown on Re(0001) is strongly corrugated, with a buckling of 1.6 ?, yielding a simulated C 1s core level spectrum which is in excellent agreement with the experimental one. We found that corrugation is closely knit with the thermal stability of the C network: C-C bond breaking is favored in the strongly buckled regions of the moiré cell, though it requires the presence of diffusing graphene layer vacancies. |
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