Theory of carrier concentration-dependent electronic behavior in layered cobaltates |
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Authors: | Li H Clay R T Mazumdar S |
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Affiliation: | Department of Physics, University of Arizona, Tucson, Arizona 85721, USA. |
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Abstract: | A natural explanation for the carrier concentration-dependent electronic behavior in the layered cobaltates emerges within correlated-electron Hamiltonians with finite on-site and significant nearest neighbor hole-hole Coulomb repulsions. The nearest neighbor repulsion decreases hole double occupancy below hole density 1/3, but increases the same at higher hole densities. Our conclusion is valid for both single-band and three-band extended Hubbard Hamiltonians, and sheds light on concentration dependent e'(g) hole occupancy within the latter. |
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