Exciton bound to an ionized donor impurity in GaAs/Ga1−xAlxAs ellipsoidal finite-potential quantum dots under hydrostatic pressure |
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Authors: | L Shi |
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Institution: | a School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, People’s Republic of Chinab College of Science, Inner Mongolia Agricultural University, Hohhot 010018, People’s Republic of China |
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Abstract: | In the framework of perturbation theory, a variational method is used to study the ground state of a donor bound exciton in a weakly prolate GaAs/Ga1−xAlxAs ellipsoidal finite-potential quantum dot under hydrostatic pressure. The analytic expressions for the Hamiltonian of the system have been obtained and the binding energy of the bound exciton is calculated. The results show that the binding energy decreases as the symmetry of the dot shape reduces. The pressure and Al concentration have a considerable influence on the bound exciton. The binding energy increases monotonically as the pressure or Al concentration increases, and the influence of pressure or Al concentration is more pronounced for small quantum dot size. |
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Keywords: | A Ellipsoidal quantum dot D Donor bound exciton D Hydrostatic pressure |
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