Polycarbazole-based electrochemical transistor |
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Authors: | V. Rani K. S. V. Santhanam |
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Affiliation: | (1) Institute of Technology, Banaras Hindu University, Varanasi-221 005, India, IN;(2) Chemical Physics Group, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005, India, IN |
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Abstract: | A polycarbazole conducting polymer transistor has been constructed having the dimensions 1 cm × 2 cm × 1 mm. Polycarbazole film used here has a redox potential of 1.30 V. Polymer-coated platinum plates were used as the source and drain. The inter-electrode spacing of the device is typically of the order of 200–500 μm to minimise the internal resistance. The high saturation current region of the transistor in the most positive bias voltage (1.3 V), with negligible hysteresis and greater stability, appears to give a device that is superior to other conducting polymer transistors. Received: 27 May 1997 / Accepted: 17 September 1997 |
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Keywords: | Transistor Conducting polymer Polycarbazole |
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