Effects of ion-doping at different sites on multiferroic properties of BiFeO3 thin films |
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| Authors: | Jun Liu Meiya Li Zhongqiang Hu Ling Pei Jing Wang Xiaolian Liu and Xingzhong Zhao |
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| Institution: | (1) College of Physics and Electronic Science, Hubei Normal University, 435002 Huangshi, China |
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| Abstract: | A-site Ce and B-site Zr codoped Bi1−x
Ce
x
Fe1−y
Zr
y
O3 (BCFZ) thin films with different compositions were successfully prepared on the Pt/Ti/SiO2/Si substrates by chemical solution deposition. The influence of the A-site Ce and B-site Zr codoping on the structure, surface
morphology, electrical and magnetic properties of BFO films were investigated, respectively. The comparative study suggested
that the A-site Ce doping with various contents have notable influences on the electrical properties of the BFO films, while
the B-site Zr doping with different contents affect mainly the magnetic properties of the BFO films. Compared with the other
BCFZ films studied here, the Bi0.97Ce0.03Fe0.97Zr0.03O3 film showed the lowest dielectric loss and leakage current density, a well-squared P–E loop and fatigue-free characteristics as well as the strong magnetization. |
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