| 异质衬底上HVPE法生长GaN厚膜的研究进展 |
| |
| 引用本文： | 贾婷婷,林辉,滕浩,侯肖瑞,王军,周圣明.异质衬底上HVPE法生长GaN厚膜的研究进展[J].人工晶体学报,2009,38(2):501-505. |
| |
| 作者姓名： | 贾婷婷 林辉 滕浩 侯肖瑞 王军 周圣明 |
| |
| 作者单位： | 中国科学院强激光材料科学与技术重点实验室,中国科学院上海光学精密机械研究所,上海,201800 |
| |
| 摘 要： | 氮化镓基(GaN)光电器件的快速发展,对GaN的质量提出更高的要求,同质外延可以避免由于失配引起的缺陷,厚膜生长是解决GaN体材料生长困难的有效手段.氢化物气相外延(HVPE)是目前最普遍的制备氮化镓厚膜的方法.衬底对于GaN厚膜的影响不可忽视,本文总结了在蓝宝石、碳化硅和铝酸锂衬底上制备GaN厚膜的研究进展,讨论了今后的研究方向.
|
| 关 键 词： | 氮化镓 HVPE 蓝宝石 碳化硅 铝酸锂 |
Research Progress in the Growth of GaN Thick Films on Heterogeneity Substrates by HVPE |
| |
| JIA Ting-ting,LIN Hui,TENG Hao,HOU Xiao-rui,WANG Jun,ZHOU Sheng-ming.Research Progress in the Growth of GaN Thick Films on Heterogeneity Substrates by HVPE[J].Journal of Synthetic Crystals,2009,38(2):501-505. |
| |
| Authors: | JIA Ting-ting LIN Hui TENG Hao HOU Xiao-rui WANG Jun ZHOU Sheng-ming |
| |
| Institution: | Key Laboratory of Material Science and Technology for High Power Lasers;Shanghai Institute of Optics and Fine Mechanics;Chinese Academy of Sciences;Shanghai 201800;China |
| |
| Abstract: | The rapid development of GaN based photoelectrical device, requires higher quality of GaN materials. Homoepitaxy will aviod the drawback introduced by heterepitaxy. Hydride Vaper Phase Epitaxy (HVPE) is one of the most popular methods for growing gallium nitride. In this paper, the technical theory of HVPE was summarized. Since the influence of substrate for GaN cannot be ignored, the progress of GaN grown on different substrates was reviewed. Further research was pointed out lastly. |
| |
| Keywords: | HVPE |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《人工晶体学报》浏览原始摘要信息 |
| 点击此处可从《人工晶体学报》下载免费的PDF全文 |
|
