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Observation of coherent phonon states in porous silicon films
Authors:A L Dobryakov  V A Karavanskii  S A Kovalenko  S P Merkulova  Yu E Lozovik
Institution:1. Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow region, 142092, Russia
2. Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 117942, Russia
3. Humboldt Universit?t Berlin, D-10117, Berlin, Germany
Abstract:The dynamics of differential transmission and reflectance spectra of porous silicon films was studied using the femtosecond excitation technique (τ≈50 fs, ?ωpump=2.34 eV) with supercontinuum probing (?ωprobe=1.6–3.2 eV) and controlled time delay with a step of Δt=7 fs between the pump and probe pulses. A short-lived region of photoinduced bleaching was observed in the differential transmission spectra at wavelengths shorter than the pump wavelength. The excitation of coherent phonon states with a spectrum corresponding to nanocrystalline silicon with an admixture of a disordered phase was observed. The relaxation of electronic excitation was found to slow down in the spectral region where the amplitude of excited coherent vibrations was maximal.
Keywords:
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