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High spatial resolution ellipsometer for characterization of epitaxial graphene
Authors:Gaskell Peter E  Skulason Helgi S  Strupinski Wlodek  Szkopek Thomas
Institution:Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, H3A-2A7, Canada. peter.gaskell@mail.mcgill.ca
Abstract:An ellipsometer with 3μm×5μm spot size constructed with a single focusing and imaging element is used to measure the layer number of exfoliated graphene on glass and expitaxial graphene on SiC. Ellipsometric sensitivity to graphene layer number increases with decreasing layer number and decreasing substrate refractive index. Single-atomic-layer sensitivity has been achieved. High spatial resolution imaging and ellipsometry is useful for rapid characterization of epitaxially grown graphene films.
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