Surface confinement of the InN-rich phase in thick InGaN on GaN |
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| Authors: | Taek-Seung Kim Sang-Woo Kim Han-Ki Kim Ji-Myon Lee |
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| Institution: | aDepartment of Materials Science and Metallurgical Engineering, Sunchon National University, Suncheon, Jeonnam 540-742, Republic of Korea;bSchool of Advanced Materials and System Engineering, Kumoh National Institute of Technology, Kumi 730-701, Republic of Korea |
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| Abstract: | The surface confinement of InN-rich phase in thick In0.15Ga0.85N epitaxial films on GaN were observed by photoluminescence depth profiling employing an inductively coupled Cl2 plasma etching technique. The photoluminescence measurements showed that InN-rich phases were present on the surface of the thick In0.15Ga0.85N films. After removing the surface layer of 50 nm, the PL peaks corresponding to the InN-rich phases completely disappeared, suggesting that the InN-rich phase region is confined to a depth of 50 nm. |
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| Keywords: | InN-rich phase Photoluminescence Depth-profiling Etching |
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