Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si |
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Authors: | Chen Gui-Feng Yan Wen-Bo Chen Hong-Jian Cui Hui-Ying and Li Yang-Xian |
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Institution: | School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China |
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Abstract: | This paper investigates the infrared absorption spectra of
oxygen-related complexes in silicon crystals irradiated with
electron (1.5~MeV) at 360~K. Two groups of samples with low ${\rm
O}_{\rm i}]=6.9\times 10^{17}$~cm$^{ - 3}$ and high ${\rm O}_{\rm
i}]=1.06\times 10^{18}$~cm$^{ - 3}$ were used. We found that the
concentration of the VO pairs have different behaviour to the
annealing temperature in different concentration of oxygen specimen,
it is hardly changed in the higher concentration of oxygen specimen. It
was also found that the concentration of VO$_{2}$ in lower concentration
of oxygen specimen gets to maximum at 450~${^\circ}$C and then
dissapears at 500~${^\circ}$C, accompanied with the appearing of
VO$_{3}$. For both kinds of specimens, the concentration of VO$_{3}$
reachs to maximum at 550~${^\circ}$C and does not disappear
completely at 600~${^\circ}$C. |
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Keywords: | electron irradiation Cz-Si defect complex annealing processes |
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