Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

This paper investigates the infrared absorption spectra ofoxygen-related complexes in silicon crystals irradiated withelectron (1.5~MeV) at 360~K. Two groups of samples with low [${rmO}_{rm i}]=6.9times 10^{17}$~cm$^{ - 3}$ and high [${rm O}_{rmi}]=1.06times 10^{18}$~cm$^{ - 3}$ were used. We found that theconcentration of the VO pairs have different behaviour to theannealing temperature in different concentration of oxygen specimen,it is hardly changed in the higher concentration of oxygen specimen. Itwas also found that the concentration of VO$_{2}$ in lower concentrationof oxygen specimen gets to maximum at 450~${^circ}$C and thendissapears at 500~${^circ}$C, accompanied with the appearing ofVO$_{3}$. For both kinds of specimens, the concentration of VO$_{3}$reachs to maximum at 550~${^circ}$C and does not disappearcompletely at 600~${^circ}$C.