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Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers |
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| Authors: | Y-K Kuo S-H Yen M-W Yao M-C Tsai M-L Chen B-T Liou |
| Institution: | 1. Department of Physics, National Changhua University of Education, Changhua, 500, Taiwan 2. Institute of Photonics, National Changhua University of Education, Changhua, 500, Taiwan 3. Department of Mechanical Engineering, Hsiuping Institute of Technology, Taichung, 412, Taiwan |
| Abstract: | In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5. |
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