Experimental determination of the constants of absolute volume deformation potentials at band edges in semiconductors

A method is proposed for determining the constants of absolute volume deformation potentials at edges of the conduction and valence bands in semiconductors. This method is based on (i) the volume-concentration effect, (ii) the concept that the energy of deep-lying strongly localized impurity centers does not depend on the hydrostatic pressure, and (iii) the use of experimental data on the electrical resistivity and Hall coefficient. For Ge, GaAs, InAs, and InSb semiconductors, the constants of absolute volume deformation potentials at edges of the conduction and valence bands are determined from our results and data available in the literature.