| Affiliation: | (1) Frumkin Institute of Electrochemistry, Russian Academy of Sciences, Leninskii pr. 31, 119071 Moscow, Russia;(2) Prokhorov Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, 119991 Moscow, Russia;(3) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, pl. Vvedenskogo 1, 141190 Fryazino, Russia;(4) Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, 117924 Moscow, Russia |
| Abstract: | The photocurrent and photopotential for undoped polycrystalline diamond film electrodes prepared by chemical vapor deposition and annealed in vacuum at 1500–1640°C are measured. The  metal-like samples (annealed at  1630°C) have a negligible photosensitivity. Judging from the positive sign of the photopotential and the cathodic direction of the photocurrent, the material under study formally behaves as a p-type semiconductor. The photoeffects are presumably caused by structure defects, in particular, the dislocations in diamond crystallites formed close to intercrystalline boundaries during the high-temperature annealing.Translated from Elektrokhimiya, Vol. 41, No. 3, 2005, pp. 343–349.Original Russian Text Copyright © 2005 by Pleskov, Krotova, Ralchenko, Khomich, Khmelnitskii. |
