Diode-end-pumped Tm,Ho:YVO4 microchip laser at room temperature

Room temperature Tm, Ho:YVO₄ microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M ² factor was measured to be 1.4.