Manganese-related luminescence in GaInAs/AlInAs multiple quantum wells grown on InP by molecular beam epitaxy |
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Authors: | Y -H Zhang N N Ledentsov K Ploog |
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Institution: | (1) Max-Planck-Institut für Festkörperforschung, W-7000 Stuttgart 80, Fed. Rep. Germany |
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Abstract: | Two Mn-related luminescence peaks have been observed in a series of nominally undoped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells (MQW) grown lattice-matched on InP substrates by molecular beam epitaxy. These two peaks correspond to on-center and on-edge impurity states, respectively. The origin of the Mn impurities is outdiffusion from the Fe-doped semiinsulating InP substrate into the epitaxial layer. The binding energy of Mn acceptors, determined to be 53±3 meV in bulk-like Ga0.47In0.53As, increases to 80±5 meV for the on-center Mn state in a 58 Å MQW. The strong well-width dependence of the binding energy is explained in terms of the unique behavior of the Mn impurity in III–V semiconductors. The Mn in Ga0.47In0.53As and Ga0.47In0.53As/Al0.48In0.52As MQWs behaves predominantly as a deep impurity.On leave from: A. F. Ioffe Physicotechnical Institute, Leningrad, USSR |
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Keywords: | 78 65 Fa 73 20 Hb 78 55 Cr |
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