Orbital magnetization in semiconductors |
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| Authors: | Fang Cheng Wang Zhi-Gang Li Shu-Shen Zhang Ping |
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| Affiliation: | Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Physics Department, East China Institute of Technology, Fuzhou 344000, Jiangxi Province, China; Institute of Applied Physics and Computational Mathematics, Beijing 100088, China; Center for Applied Physics and Technology, Peking University, Beijing 100871, China |
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| Abstract: | This paper theoretically investigates the orbitalmagnetization of electron-doped (n-type) semiconductorheterostructures and of hole-doped (p-type) bulk semiconductors,which are respectively described by a two-dimensional electron/holeHamiltonian with both the included Rashba spin--orbit coupling andZeeman splitting terms. It is the Zeeman splitting, rather than theRashba spin--orbit coupling, that destroys the time-reversalsymmetry of the semiconductor systems and results in nontrivialorbital magnetization. The results show that the magnitude of theorbital magnetization per hole and the Hall conductance in thep-type bulk semiconductors are about 10-2--10-1 effectiveBohr magneton and 10-1--1 e2/h, respectively. However,the orbital magnetization per electron and the Hall conductance inthe n-type semiconductor heterostructures are too small to be easilyobserved in experiment. |
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| Keywords: | orbital magnetization Zeeman splitting Berry phaseeffect semiconductor |
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