Beiträge zum thermischen Verhalten von Sulfaten. XVI. Zum chemischen Transport von Ga2(SO4)3 mit Cl2 und mit HCl. Experimente und Modellrechnungen

Contributions on the Thermal Behaviour of Sulphates. XVI. The Chemical Vapour Transport of Ga₂(SO₄)₃ with Cl₂ and HCl. Experimental Results and Calculations Crystals of anhydrous Ga₂(SO₄)₃ can be grown by means of CVT (e. g. 525°C → 475°C) in the less hot region of a closed silica ampoule. We investigated the dependance of the deposition rate on the concentration of the transport agent (Cl₂, HCl) and the transport temperature (475°C ≤ T ≤ 750°C; T₂ > T₁; ΔT = 50°C; T = 0.5(T₁ + T₂)). Experimental results and thermodynamic calculations on the basis of Δ_FH ${}_{\text{298}}^{\text{º}}$ (Ga₂(SO₄)₃) = ?686.5 kcal/mol show a good agreement.