Photoluminescence and luminescence excitation spectra in ZnSiP2

Summary Measurements of photoluminescence and luminescence excitation spectra of ZnSiP₂ have been performed at 4.2K and two results were obtained. One is the observation of a new sharp emission line at 1.980 eV, due to the bound exciton associated with the pseudodirect gap. The other is the observation of another new series of absorption lines in the luminescence excitation spectrum of an emission line, at 1.984 eV, in addition to those reported previously. These results indicate that in ZnSiP₂ radiative transitions occur at both the indirect and the pseudodirect gaps. Paper presented at the ?V International Conference on Ternary and Multinary Compound?, held in Cagliari, September 14–16, 1982.