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Kinetics of water molecule adsorption on the porous silicon surface
Authors:D. M. Kurmasheva  V. D. Travkin  P. O. Kapralov  V. G. Artemova  V. I. Tikhonov  A. A. Volkov  E. S. Zhukov  D. G. Artemov  N. P. Chirskaya
Affiliation:1. Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia
Abstract:The kinetics of water vapor adsorption on the porous silicon surface is studied by the gas relaxometry method. The process multistepping which is reflected in sequential changes in H2O molecule diffusivities into the porous matrix, is found. Phenomenological models describing the experiment are considered.
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