CrAs(0 0 1)/AlAs(0 0 1) heterogeneous junction as a spin current diode predicted by first-principles calculations |
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Authors: | Y. Min K.L. Yao Z.L. Liu S.C. Zhu |
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Affiliation: | a School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China b The International Center of Materials Physics, Chinese Academy of Science, Shenyang 110015, China |
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Abstract: | We report on first-principles calculations of spin-dependent quantum transport in a CrAs(0 0 1)/AlAs(0 0 1) heterogeneous junction and predict a strong diode effect of charge and spin current. The minority spin current is absolutely inhibited when the bias voltage is applied to the terminals of both CrAs and AlAs. The majority spin current is inhibited when the bias voltage is applied to the terminal of CrAs and “relaxed” when the bias voltage is applied to the terminal of AlAs. The charge and spin current diode are promising for reprogrammable logic applications in the field of spintronics. |
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Keywords: | 85.35.&minus p 72.25.&minus b 85.65.+h |
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