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Anisotropy of magnetoresistance in Be Co-doped GaMnAs
Authors:P.B. Parchinskiy  Fucheng Yu  Dojin Kim
Affiliation:a Department of Materials Science and Engineering, Chungnam National University, 220 Gung-dong, Yuseong-ku, Daejeon 305 764, Republic of Korea
b National University of Uzbekistan, Tashkent 700174, Uzbekistan
Abstract:Magnetotransport properties of GaMnAs co-doped with Be have been studied as a function of applied magnetic field orientations and temperature. It was shown that magnetoresistivity phenomena in GaMnAs:Be depend not only on the relative orientation of the current and applied magnetic field, but also on the respective orientation of these two vectors to the crystalline axis.
Keywords:72.80.Ey   75.30.Gw   75.50.Pp
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