Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation |
| |
Authors: | C.H. Chen H.H. Hsieh D.C. Yan J.J. Kai |
| |
Affiliation: | a Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan b Nuclear Science and Technology Development Center, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan c Department of Electrical Engineering, Chung Cheng Institute of Technology, Taoyuan 335, Taiwan d Academia Sinica Institute of Physics, Taiwan e Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan |
| |
Abstract: | Using Mn+ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn+ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at Tc 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples. |
| |
Keywords: | 75.50.Pp 75.30.Gw 61.85.+p 61.80.Jh 68.55.Jk |
本文献已被 ScienceDirect 等数据库收录! |
|