Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields

We report a study of spin-related magnetotransport properties of a type II broken-gap heterostructure formed by InAs substrate bulky doped with Mn and δ-Mn-doped GaInAsSb epilayer. Planar and vertical quantum magnetotransport in a 2D-electron-hole system at the single type II broken-gap InAs/GaInAsSb heterointerface was investigated in high magnetic fields under the quantum Hall regime up to 15 T at low temperature (T=1.5 K). The I-V characteristics near the dielectric phase boundary show the step-like behavior that corresponds to the quantum conductance in a disordered 2D structure through the extended edge states of the nearest Landau level closest to the Fermi level. The value of these steps is determined by the orientation of the 2D-electron spin at the Landau level and the magnetic moment of Mn in the δ-layer.