Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior |
| |
Authors: | Arthur Useinov,Oleg Mryasov,Jü rgen Kosel |
| |
Affiliation: | 1. Spintronics Theory Group, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal (Jeddah) 23955, Saudi Arabia;2. MINT Center, University of Alabama, Tuscaloosa, AL, USA;3. Sensing, Magnetism and Microsystems Group, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal (Jeddah) 23955, Saudi Arabia |
| |
Abstract: | In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR–V curves, output voltages and I–V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR–V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. |
| |
Keywords: | Magnetic tunnel junction (MTJ) Tunneling magnetoresistance (TMR) Spinelectronic |
本文献已被 ScienceDirect 等数据库收录! |
|