1. Department of Physics, Purdue University, West Lafayette, IN 47907, USA;2. Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA;3. Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA
Abstract:
We report experiments where magnetization in GaMnAs ferromagnetic semiconductor is manipulated via strain or electric current. In both cases, charge carrier holes become partially polarized due to the anisotropic modification of holes spectra caused by spin–orbit interactions, and this polarization exerts spin torque sufficient to rotate ferromagnetic domains.