Magnetic tunnel structures: Transport properties controlled by bias,magnetic field,and microwave and optical radiation |
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Authors: | NV Volkov EV Eremin AS Tarasov MV Rautskii SN Varnakov SG Ovchinnikov GS Patrin |
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Institution: | 1. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russia;2. Siberian State Aerospace University, Krasnoyarsk 660014, Russia;3. Siberian Federal University, Krasnoyarsk 660041, Russia |
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Abstract: | Different phenomena that give rise to a spin-polarized current in some systems with magnetic tunnel junctions are considered. In a manganite-based magnetic tunnel structure in CIP geometry, the effect of current-channel switching was observed, which causes bias-driven magnetoresistance, rf rectification, and the photoelectric effect. The second system under study, ferromagnetic/insulator/semiconductor, exhibits the features of the transport properties in CIP geometry that are also related to the current-channel switching effect. The described properties can be controlled by a bias, a magnetic field, and optical radiation. At last, the third system under consideration is a cooperative assembly of magnetic tunnel junctions. This system exhibits tunnel magnetoresistance and the magnetic-field-driven microwave detection effect. |
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Keywords: | Spintronics Magnetic tunnel junction High-frequency rectification Photoelectric effect |
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