Initial stages in the Sm-Si(111) interface formation

The initial stages in the formation of the Sm-Si(111) interface have been studied by thermal desorption, atomic beam modulation, and low-energy-electron-diffraction spectroscopy. The structure of adsorbed films and samarium silicide films, as well as the Sm atom desorption kinetics have been investigated within a broad range of surface coverages and temperatures. The activation energy of desorption from the thermally most stable 3×2 submonolayer structure, as well as the binding energy of a single samarium atom with the substrate, have been measured. The temperature of the onset of silicide decomposition and the activation energy of this process have been determined. It is shown that the Sm-Si(111) interface forms by a mechanism close to that of Stransky-Krastanov. Fiz. Tverd. Tela (St. Petersburg) 40, 371–378 (February 1998)