Analyse von Schichten und Schichtsystemen mit hochenergetischen Ionenstrahlen

Summary The utility of energetic ion beams for thin film analysis is reviewed briefly. The different methods for analysis are based on the different interactions of the fast ions with atomic nuclei and electrons of the solid state samples to be analysed. These interactions include not only ion scattering, but also emission of x-rays and nuclear reactions. Quantitative chemical analysis with good depth resolution by Rutherford-backscattering analysis (RBS) is demonstrated for the suicide formation at the interface between Si and metal. Particle induced x-ray emission (PIXE) can be used for the detection of small amounts of impurities (atomic number Z 6). In addition, light elements can be detected within a heavy matrix using ion beams for nuclear reaction analysis (NRA). The different ion beam methods are compared and their advantages are discussed with respect to different analytical problems. In addition, channeling experiments on epitaxial superlattices are presented which allow the determination of the strain individual interfaces.