Nucleation effects during MBE growth of Sn-Doped GaAs |
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Authors: | J. J. Harris B. A. Joyce J. P. Gowers J. H. Neave |
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Affiliation: | (1) Philips Research Laboratories, RH 1 5 HA Redhill, Surrey, UK |
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Abstract: | The morphology, structure and composition of Sn films on GaAs substrates have been investigated in relation to the predeposition technique used with Sn doping of MBE-grown GaAs films. It has been shown that 3-D aggregates of Sn are formed and a similar morphology has been identified in the Sn which accumulates at the surface of all Sn-doped GaAs films. The way in which this relates to donor incorporation is considered and a simple model of incorporation kinetics proposed which is shown to be consistent with observation. |
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Keywords: | 73.60 |
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