| 硅微电子兼容技术的发展 |
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| 引用本文： | 吴金,黄流兴.硅微电子兼容技术的发展[J].电子器件,1993,16(2):60-66,75. |
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| 作者姓名： | 吴金 黄流兴 |
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| 作者单位： | Wu Jin，Huang liuxing，Zheng Jiang，Liu Weidong，Wei Tongli |
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| 摘 要： | 硅微电子兼容技术是微电子技术与其它相关技术相互结合的产物,是微电子学科领域的重要发展方向之一,并使其在性能和应用领域等方面得到进一步的提高和扩展.本文主要介绍GaAs/Si、SiGe/Si、LB/Si、低温微电子、真空微电子和超导/半导兼容技术的新进展和发展趋.
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| 关 键 词： | 硅 微电子 兼容技术 |
Development of the silicon microelectronic compatible techniques |
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| Wu Jin,Huang liuxing,Zheng Jiang,Liu Weidong,Wei Tongli.Development of the silicon microelectronic compatible techniques[J].Journal of Electron Devices,1993,16(2):60-66,75. |
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| Authors: | Wu Jin Huang liuxing Zheng Jiang Liu Weidong Wei Tongli |
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| Abstract: | Silicon compatible technique is the result of combining other relative technique with microelectronics, it is one of the most important devclopment in these areas, which greatly improved and extended its properties and applications. The recent progress and the development of GaAs/Si, SiGe /Si LB / Si Cryogenic microelectronics, Vacumm microelectronics andSuperconductor / Semiconductor techniques will be discussed in detail in this paper. |
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| Keywords: | Silicon Microelectronics Compatible Technique |
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