Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates |
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Authors: | V Z Zubialevich E V Lutsenko V N Pavlovskii A L Gurskii A V Danilchyk G P Yablonskii M B Danailov B Ressel A A Demidovich J F Woitok H Kalisch Y Dikme R H Jansen M Lünenbürger B Schineller M Heuken |
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Institution: | 1. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 prosp. Nezavisimosti, Minsk, 220072, Belarus 6. Belorussian State University of Information Science and Radioelectronics, Minsk, Belarus 2. Sincrotrone Elettra [Elettra Synchrotron, Trieste, Italy 3. PANalytical Laboratory, Almelo, Netherlands 4. Institut fur Theoretische Elektrotechnik, RWTH Aachen [Institute of Theoretical Electrotechnology, Rhenish-Westphalian Technical University, Aachen, Aachen, Germany 5. AIXTRON AG, Aachen, Germany
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Abstract: | With the aim of establishing the mechanisms for spontaneous recombination and lasing, we have studied InGaN/GaN multiple quantum
well heterostructures emitting in the 450 nm region and grown by organometallic vapor-phase epitaxy on silicon substrates
using several mechanical stress-reducing AlN/AlGaN inserts. Photoluminescence (PL) excitation spectroscopy, the non-monoexponential
nonequilibrium carrier relaxation kinetics, and x-ray diffractometry data indicate significant inhomogeneity of the InGaN
solid solution in quantum wells of these structures. The dependences of the position of the photoluminescence spectra on the
excitation level and the temperature, the large shift in the photoluminescence, gain, and lasing spectra relative to the absorption
edge allow us draw the conclusion that the dominant contribution to spontaneous and stimulated recombination comes from nonequilibrium
charge carriers localized in indium-rich InGaN clusters.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 1, pp. 94–101, January–February, 2008. |
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Keywords: | ternary InGaN compound quantum well heterostructures recombination mechanism localization of charge carriers clusterization |
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