快速高温热退火对InGaNAs/GaAs量子阱的影响

从系统自由能角度,阐明了MBE生长的InGaNAs量子阱材料在高温热退火过程中的结构和物理性能的变化。在热退火时,In-Ga互扩散和N-As互扩散引起spinodal分解,N原子趋向于与In结合形成In-N键,使InGaNAs材料的带隙增加,从而引起PL谱峰值的蓝移。

The Effect of Rapid Thermal Annealing on InGaNAs / GaAs Quantum Wells

In this report, the effects of high temperature rapid thermal annealing on properties of InGaNAs/GaAs quantum wells grown by molecular beam epitaxy has been discussed. From free energy point of view, it is found that the inter-diffussion between In-Ga and N-As atoms caused by the rapid thermal annealing leads to a spinodal decomposition. The N atoms tend to bond to In atoms, resulting increments of energy band gap of InGaNAs materials and blue shifts of photoluminescence peaks.