Fabrication of low phase transition temperature vanadium oxide films by direct current reactive magnetron sputtering and oxidation post-anneal method |
| |
| Affiliation: | 1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. Shenzhen Key Laboratory of Advanced Thin Film and Applications, College of Physics and Energy, Shenzhen University, Shenzhen 518060, China;4. Shenzhen University, Shenzhen 518060, China |
| |
| Abstract: | Vanadium oxide thin films were deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target and subsequent oxidation annealing. The deposition and annealing parameters were given in detail. The samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM). The phase transitions of films were observed by measuring their electrical and optical property variations at different temperature. The results indicated that the films fabricated had a semiconductor–metal phase transition temperature of about 30 °C. |
| |
| Keywords: | Vanadium oxide films Magnetron sputtering Post-anneal Phase transition temperature |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
