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Modeling and simulation of mid-IR amplifying characteristics of Tm3+-doped chalcogenide Photonic Crystal Fibers
Institution:1. Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;2. IPEIN, University of Carthage, University Campus of Mrezga. P. Box 62, Nabeul 8000, Tunisia;3. Université de Sfax, Faculté des Sciences de Sfax, Département de Physique, Laboratoire des matériaux composites céramiques et polymères (LaMaCoP) Faculté des sciences de Sfax BP 805, Sfax 3000, Tunisie;4. Université de Sfax, Laboratoire de Physique Appliquée, Groupe de Physique des matériaux luminescents, Faculté des Sciences de Sfax, Département de Physique, BP 1171, Université de Sfax, Sfax 3018, Tunisie;5. Department of Physics, Faculty of Science and Arts, Jeddah University, Jeddah, Saudi Arabia;6. Physics Department, Faculty of Science, Al-Azhar University, Assiut 71452, Egypt;7. Physics Department, Collage of Science in Zulfi, Majmaah University, 11952, Saudi Arabia;8. Department of Physics, Faculty of Science, Port Said University, Port Said, Egypt;1. Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China;2. Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo 315211, China;3. Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116, China;4. Laboratory of Glass and Ceramics, UMR CNRS 6226, University of Rennes I, 35042 Rennes Cedex, France;1. Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, College of Information Science and Engineering, Ningbo University, Ningbo 315211, China;2. Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, China;3. Nanhu College, Jiaxing University, Jiaxing 314001, China
Abstract:This paper deals with the designing of a Tm3+-doped chalcogenide Photonic Crystal Fiber (PCF) amplifier operating in the mid-IR range. The chalcogenide glass of 72GeS2–18Ga2S3–10CsI (in mol%) was fabricated with the high temperature melt-quenching method, which exhibited a strong emission peak around 3.8 μm under the excitation of a 800 nm laser. By employing the rate equations and propagation equations, the amplifying characteristics of the designed PCF amplifier were worked out. It is shown that the designed PCF amplifier exhibits a signal gain larger than 30 dB and a spectral width wider than 200 nm. The theoretical models and simulation results show that the PCF presented in this work can be used in developing high efficiency mid-IR light sources.
Keywords:Thulium-doped chalcogenide glass  Photonic Crystal Fiber  Rate-propagation equation  Mid-infrared signal gain
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