Photostimulated luminescence properties of BaFBr:Eu under ion irradiation |
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| Institution: | 1. Department of Materials Science and Engineering, Sharif University of Technology, 14588 Tehran, Iran;2. Institute for Nanoscience and Nanotechnology, Sharif University of Technology, 14588 Tehran, Iran;3. Research Institute of Advanced Materials, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Republic of Korea |
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| Abstract: | The photostimulated luminescence (PSL) properties of the phosphor BaFBr:Eu after ion beam irradiation was analyzed; in particular, the PSL intensity dependent on ion fluence. The PSL intensity increased linearly with the ion fluence up to 1012 ions/cm2, and subsequently decreased gradually. The ion fluence dependence was observed to be similar among samples containing different F centers or different Eu concentrations. The fluence dependence was quantitatively analyzed based on a trapping model, in which competition between the trapping processes to storage centers and radiation defects is assumed; the model explained the experimental data quantitatively. The results indicate that radiation defects influence the PSL properties via the trapping of photostimulated electrons. |
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| Keywords: | Photostimulated luminescence Ion irradiation Radiation defects Color centers |
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