Modeling and deformation analyzing of InSb focal plane arrays detector under thermal shock

A higher fracture probability appearing in indium antimonide (InSb) infrared focal plane arrays (IRFPAs) subjected to the thermal shock test, restricts its final yield. In light of the proposed equivalent method, where a 32 × 32 array is employed to replace the real 128 × 128 array, a three-dimensional modeling of InSb IRFPAs is developed to explore its deformation rules. To research the damage degree to the mechanical properties of InSb chip from the back surface thinning process, the elastic modulus of InSb chip along the normal direction is lessened. Simulation results show when the out-of-plane elastic modulus of InSb chip is set with 30% of its Young’s modulus, the simulated Z-components of strain distribution agrees well with the top surface deformation features in 128 × 128 InSb IRFPAs fracture photographs, especially with the crack origination sites, the crack distribution and the global square checkerboard buckling pattern. Thus the Z-components of strain are selected to explore the deformation rules in the layered structure of InSb IRFPAs. Analyzing results show the top surface deformation of InSb IRFPAs originates from the thermal mismatch between the silicon readout integrated circuits (ROIC) and the intermediate layer above, made up of the alternating indium bump array and the reticular underfill. After passing through both the intermediate layer and the InSb chip, the deformation amplitude is reduced firstly from 2.23 μm to 0.24 μm, finally to 0.09 μm. Finally, von Mises stress criterion is employed to explain the causes that cracks always appear in the InSb chip.