Photoelectrical properties of TlGaSe2 single crystals期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Photoelectrical properties of TlGaSe2 single crystals

Affiliation:	1. Department of Physics, Faculty of Arts and Sciences, Middle East Technical University, 06531 Ankara, Turkey;2. Department of Physics, Faculty of Science, Gazi University, 06500 Ankara, Turkey;1. Department of Physics, J.D. Institute of Engineering & Technology, Yavatmal, India;2. Department of Physics, G. S. Science, Arts & Commerce College, Khamgaon, India;3. Department of Physics, S.G.B.Amravati University, Amravati, India;4. Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou, PR China;1. Dipartimento di Fisica e Astronomia, Università di Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy;2. CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy;3. Dipartimento di Chimica Industriale “Toso Montanari”, Università di Bologna, Viale Risorgimento 4, 40136 Bologna, Italy;1. Department of Anesthesiology, Dokuz Eylul University, Izmir, Turkey;2. Department of Biochemistry, Dokuz Eylul University, Izmir, Turkey;1. Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea;2. Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin 17035, Korea;3. Department of Physics, Chungbuk National University, Cheongju 28644, Korea

Abstract:	The spectral distribution of photocurrent (PC) of TlGaSe₂ single crystals in the range of wavelengths between 500 nm and 700 nm possesses a single maximum at 2.04 eV corresponds to the direct energy band gap of this crystal. The PC is enhanced dramatically by pre-illuminations at low temperatures with band gap light. The temperature dependence of PC of the sample investigated in the temperature range from 80 K to 300 K at constant heating rate shows that the overlapping peaks in the PC spectrum are direct reflection of the Thermally Stimulated Current (TSC) associated with the several trapping levels. The PC response is strongly dependent on the degree of occupancy of traps. The wavelength at the maximum of the PC spectrum is found to be dependent on the wavelength scan direction being up or down. The ferroelectric phase transitions of TlGaSe₂ are detected at ∼108 K and ∼118 K in the PC spectrum.

Keywords:	Photoconductivity Spectral distribution Recombination and trapping Temperature dependence
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