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Influence of the Ar8+ and O6+ ion implantation on the recombination parameters of p and n type implanted Si samples investigated by means of the photothermal infrared radiometry
Institution:1. Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziądzka 5/7, Toruń 87-100, Poland;2. Department of Electronics and Computer Science, Koszalin University of Technology, 2 Śniadeckich St., Koszalin 75-453, Poland;1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia;2. Institute for Energy Technology, Instituttveien 18, 2007 Kjeller, Norway;3. School of Engineering, Federal University of Rio Grande do Sul, Porto Alegre, Brazil;1. Department of Electronics and Communication Engineering, Heritage Institute of Technology, Kolkata 700107, India;2. Nano Device Simulation Laboratory, Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata 700 032, India;1. Photonics-Electronics Group, Aras International Campus, University of Tabriz, Tabriz, Iran;2. Photonics-Electronics Group, Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51665-163, Iran;3. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA 6009, Australia;1. Kyiv National Taras Shevchenko University, MSP 03680 Kyiv, Ukraine;2. Institute for Nuclear Research, MSP 03680 Kyiv, Ukraine;3. Nikolaev Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia
Abstract:This paper presents the influence of Ar8+ and O6+ ion implantation on the recombination parameters of n and p type Si samples. These parameters were determined from the fitting of theoretical characteristics to the experimental photothermal radiometric (PTR) characteristics. We found that with the increasing ion implantation doses (i) the changes of the bulk recombination lifetimes and the carrier diffusivity were not observed; (ii) the increasing of the surface recombination velocities and the parameter A were observed. This paper also proves that it is possible to interpret the experimental PTR characteristics with a relatively simple effective model of a PTR signal.
Keywords:Semiconductors  Recombination lifetime  Surface recombination velocity  Ion implantation  Photothermal radiometry
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